Monte-Carlo modeling of monolithic CMOS sensors for X-ray and charged-particle imaging

A Monte Carlo model has been developed for epitaxial silicon active pixel sensor arrays. Ionization generation of 55Fe X-rays and high energy electrons are modeled directly using random numbers that follow an exponential distribution and a Bichsel distribution, respectively. Both the simulation and measurement have identified a considerable bulk-silicon substrate contribution to collected ionization electrons, which is important in accurate modeling of sensor response to high energy electrons.

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