Predicted elastic constants and critical layer thicknesses for cubic phase AlN, GaN, and InN on β‐SiC
暂无分享,去创建一个
[1] Devreese,et al. Pressure dependence of the electronic properties of cubic III-V In compounds. , 1990, Physical review. B, Condensed matter.
[2] Robert F. Davis,et al. Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy , 1989 .
[3] Devreese,et al. Electronic properties under pressure of the cubic binary Ga compounds. , 1988, Physical review. B, Condensed matter.
[4] Thorvald G. Andersson,et al. Variation of the critical layer thickness with In content in strained InxGa1−xAs‐GaAs quantum wells grown by molecular beam epitaxy , 1987 .
[5] Masashi Mizuta,et al. Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine , 1986 .
[6] K. Tsubouchi,et al. Zero-Temperature-Coefficient SAW Devices on AlN Epitaxial Films , 1985, IEEE Transactions on Sonics and Ultrasonics.
[7] A. Sheleg,et al. Study of the elastic properties of gallium nitride , 1978 .
[8] J. W. Matthews,et al. Defects in epitaxial multilayers , 1974 .
[9] R. Martin. Erratum: Relation between elastic tensors of wurtzite and zinc-blende structure materials , 1972 .
[10] F. Robinson. Relations between the components of the non-linear polarisability tensor in cubic and hexagonal II–VI compounds , 1968 .
[11] D. C. Hensley,et al. T = 2 states in 16N , 1968 .