High-sensitivity high-stability silicon photodiodes for DUV, VUV and EUV spectral ranges
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[1] Eric M. Gullikson,et al. EUV optics contamination studies in presence of selected hydrocarbons , 2008, SPIE Advanced Lithography.
[2] Robert Mertens,et al. 10 µm pixel-to-pixel pitch hybrid backside illuminated AlGaN-on-Si imagers for solar blind EUV radiation detection , 2010, 2010 International Electron Devices Meeting.
[3] F. Scholze,et al. Characterization of detectors for extreme UV radiation , 2006 .
[4] H. Melchior,et al. PtSi–n–Si Schottky‐barrier photodetectors with stable spectral responsivity in the 120–250 nm spectral range , 1996 .
[5] L. R. Canfield,et al. Evaluation of Au/GaAsP and Au/GaP Schottky photodiodes as radiometric detectors in the EUV , 1996 .
[6] Francesco Sarubbi,et al. High Effective Gummel Number of CVD Boron Layers in Ultrashallow $\hbox{p}^{+}\hbox{n}$ Diode Configurations , 2010, IEEE Transactions on Electron Devices.
[7] S. Nihtianov,et al. Optical stability investigation of high-performance silicon-based VUV photodiodes , 2010, 2010 IEEE Sensors.
[8] Gerhard Ulm,et al. Ultraviolet and vacuum-ultraviolet detector-based radiometry at the Metrology Light Source , 2010 .
[9] M. W. Cowens,et al. Ultraviolet downconverting phosphor for use with silicon CCD imagers. , 1980, Applied optics.
[10] F. Scholze,et al. The EUV metrology program of PTB , 2006 .
[11] F. Scholze,et al. Pure boron-doped photodiodes: A solution for radiation detection in EUV lithography , 2008, ESSDERC 2008 - 38th European Solid-State Device Research Conference.
[12] D. Lynch,et al. Handbook of Optical Constants of Solids , 1985 .
[13] Frank Scholze,et al. Determination of the electron–hole pair creation energy for semiconductors from the spectral responsivity of photodiodes , 2000 .
[14] Frank Scholze,et al. Lifetime testing of EUV optics using intense synchrotron radiation at the PTB Radiometry Laboratory , 2001, SPIE Optics + Photonics.
[15] Lis K. Nanver,et al. CVD Delta-Doped Boron Surface Layers for Ultra-Shallow Junction Formation , 2006 .
[16] Peter Mueller,et al. High-accuracy detector calibration for EUV metrology at PTB , 2002, SPIE Advanced Lithography.
[17] Richter Mathias. Metrology of pulsed radiation for 157-nm lithography , 2002 .
[18] L. Shia,et al. Optical Performance of B-layer Ultra-shallow-junction Silicon Photodiodes in the VUV Spectral Range , 2010 .
[19] Frank Scholze,et al. The PTB high-accuracy spectral responsivity scale in the VUV and x-ray range , 2006 .
[20] F. Scholze,et al. Mean energy required to produce an electron-hole pair in silicon for photons of energies between 50 and 1500 eV , 1998 .
[21] Raj Korde,et al. Absolute silicon photodiodes for 160 nm to 254 nm photons , 1998 .
[22] F. Scholze,et al. High performance silicon-based extreme ultraviolet (EUV) radiation detector for industrial application , 2009, 2009 35th Annual Conference of IEEE Industrial Electronics.