论文信息 - Trap generation in CVD SiO2 subjected to 253.7 nm ultraviolet irradiation

Trap generation in CVD SiO2 subjected to 253.7 nm ultraviolet irradiation

Charge generation in CVD SiO/sub 2/ on Si substrate, subjected to 253.7 nm ultraviolet irradiation, is observed from variation in the effective minority carrier lifetime in Si. The carrier lifetime exhibits a minimum, a maximum, and a second minimum, before saturation. This is consistent with changes in the silicon surface potential which controls surface recombination, as injected electrons are captured by generated SiO/sub 2/ traps.

C. Ling | Z. Y. Cheng

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