Nitride-based flip-chip ITO LEDs

Nitride-based flip-chip indium-tin-oxide (ITO) light-emitting diodes (LEDs) were successfully fabricated. It was found that the forward voltage and the 20 mA output power of the flip-chip ITO LED were 3.32 V and 14.5 mW, respectively. Although the operation voltage of such a flip-chip ITO LED was slightly larger, it was found that its output power was much larger than those of conventional nonflip-chip LEDs. It was also found that flip-chip ITO LEDs were more reliable.

[1]  S. Chang,et al.  Highly reliable nitride-based LEDs with SPS+ITO upper contacts , 2003 .

[2]  Tsunemasa Taguchi,et al.  High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy , 2001 .

[3]  T. Tsai,et al.  Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts , 2002, IEEE Photonics Technology Letters.

[4]  Isamu Akasaki,et al.  Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters , 1997 .

[5]  S. Nakamura,et al.  Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes , 1994 .

[6]  Yan-Kuin Su,et al.  InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts , 2003 .

[7]  S.J. Chang,et al.  GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts , 2003, IEEE Electron Device Letters.

[8]  Michael R. Krames,et al.  High-power AlGaInN flip-chip light-emitting diodes , 2001 .

[9]  T. Wen,et al.  400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes , 2002 .

[10]  Yan-Kuin Su,et al.  High brightness InGaN green LEDs with an ITO on n/sup ++/-SPS upper contact , 2003 .

[11]  Ru-Chin Tu,et al.  Enhanced output power of InGaN-GaN light-emitting diodes with high-transparency nickel-oxide-indium-tin-oxide Ohmic contacts , 2003 .

[12]  Ho Won Jang,et al.  Effect of an indium-tin-oxide overlayer on transparent Ni/Au ohmic contact on p-type GaN , 2003 .

[13]  M. Koike,et al.  Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications , 2002 .

[14]  T. Wen,et al.  Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In/sub 0.3/Ga/sub 0.7/N/GaN short-period superlattice tunneling contact layer , 2001, IEEE Electron Device Letters.

[15]  Shyi-Ming Pan,et al.  Improvement of InGaN-GaN light-emitting diodes with surface-textured indium-tin-oxide transparent ohmic contacts , 2003, IEEE Photonics Technology Letters.

[16]  Kow-Ming Chang,et al.  Highly reliable GaN-based light-emitting diodes formed by p-In/sub 0.1/Ga/sub 0.9/N-ITO structure , 2004 .

[17]  Martin Kuball,et al.  Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm , 2002 .

[18]  Yan-Kuin Su,et al.  InGaN-GaN multiquantum-well blue and green light-emitting diodes , 2002 .

[19]  Gustaaf Borghs,et al.  40% efficient thin-film surface-textured light-emitting diodes by optimization of natural lithography , 2000 .

[20]  S. Chang,et al.  Nitride-based LEDs with p-InGaN capping layer , 2003 .

[21]  Jinn-Kong Sheu,et al.  In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer , 2003 .

[22]  T. Wen,et al.  Nitride-based green light-emitting diodes with high temperature GaN barrier layers , 2003 .

[23]  Highly reliable GaN-based light-emitting diodes formed by p-In/sub 0.1/Ga/sub 0.9/N-ITO structure , 2004, IEEE Photonics Technology Letters.

[24]  S. Chang,et al.  Transparent TiN Electrodes in GaN Metal–Semiconductor–Metal Ultraviolet Photodetectors , 2002 .

[25]  J. Kwak,et al.  Low resistance and reflective Mg-doped indium oxide-Ag ohmic contacts for flip-chip light-emitting diodes , 2004, IEEE Photonics Technology Letters.