Development of a test methodology for single-event transients (SETs) in linear devices

We present single-event transient (SET) test data on linear devices under many operational conditions in an attempt to understand the SET generation and characteristics. This is done in an attempt to define a low-cost conservative test methodology to characterize these effects. Heavy ion and laser irradiation test results are reported for a variety of bipolar analog integrated circuits.

[1]  H. R. Schwartz,et al.  Heavy ion and proton induced single event transients in comparators , 1996 .

[2]  T. L. Turflinger,et al.  Single-event effects in analog and mixed-signal integrated circuits , 1996 .

[3]  P. C. Adell,et al.  Analysis of single-event transients in analog circuits , 2000 .

[4]  Robert Ecoffet,et al.  Observation of heavy ion induced transients in linear circuits , 1994, Workshop Record. 1994 IEEE Radiation Effects Data Workshop.

[5]  R. Koga,et al.  Single event transient (SET) sensitivity of radiation hardened and COTS voltage comparators , 2000, 2000 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.00TH8527).

[6]  R. Harboe-Sorensen,et al.  Single event transient characterisation of analog IC's for ESA's satellites , 1999, 1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471).

[7]  Stephen LaLumondiere,et al.  Single event upset (SEU) sensitivity dependence of linear integrated circuits (ICs) on bias conditions , 1997 .

[8]  Stephen LaLumondiere,et al.  Observation of single event upsets in analog microcircuits , 1993 .

[9]  peixiong zhao,et al.  Critical charge for single-event transients (SETs) in bipolar linear circuits , 2001 .