PSPICE modelling of self-heating effects on lateral bipolar magneto-transistors

Abstract In this paper, PSPICE modelling of self-heating effects on the time response of electronic processing lateral bipolar magneto-transistor (LMT) circuits are covered. The self-heating effects in the relatively high base resistors of the LMTs, in the transistors itself (using a simplified Ebers–Moll model) and also in the thermal capacitance of the epoxy based encapsulation are considered. It has been found from the simulations and the experiment that the effective time constant of the output voltage increases with internal power dissipation and that there also appears dynamic hysteresis of the response to a magnetic field. It is concluded that LMTs should be as matched as possible and that especially developed packages are required to minimise these deleterious effects.