A millimeter-wave SiGe power amplifier with highly selective image reject filter

This paper presents a fully integrated 8186GHz power amplifier (PA) fabricated in a 0.12 μm SiGe BiCMOS technology. Three cascode stages, followed by two common-emitter stages were utilized to achieve power gain of 30dB with 12dBm output power at 1dB compression and saturated power of 14dBm. Small signal characteristics show peak gain achieved at 86GHz with both input and output matching is better than −15dB from 77GHz to 87GHz. A 40dB image rejection is accomplished by a selective notch filter also integrated on chip. The PA's bias is applied by digitally adjustable bias circuits to provide process and temperature compensation and was measured in room temperature, 50°C and 85°C. It consumes quiescent currents of 120mA and 85mA from a 2V and 2.7V supplies respectively at 1dB compression and occupies area of 1.6mm2.

[1]  K. Aufinger,et al.  SiGe Circuits for Automotive Radar , 2007, 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

[2]  B. Gaucher,et al.  A Silicon 60-GHz Receiver and Transmitter Chipset for Broadband Communications , 2006, IEEE Journal of Solid-State Circuits.

[3]  P. Chevalier,et al.  A Low-Voltage SiGe BiCMOS 77-GHz Automotive Radar Chipset , 2008, IEEE Transactions on Microwave Theory and Techniques.

[4]  U.R. Pfeiffer,et al.  A 77 GHz SiGe power amplifier for potential applications in automotive radar systems , 2004, 2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers.

[5]  B. Floyd,et al.  A silicon 60GHz receiver and transmitter chipset for broadband communications , 2006, 2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers.

[6]  P. Heydari,et al.  A Single-Chip Dual-Band 22–29-GHz/77–81-GHz BiCMOS Transceiver for Automotive Radars , 2009, IEEE Journal of Solid-State Circuits.

[7]  David Renshaw,et al.  European Solid-State Circuits Conference (ESSCIRC) , 1987 .

[8]  Gabriel M. Rebeiz,et al.  Millimeter-Wave Wafer-Scale Silicon BiCMOS Power Amplifiers Using Free-Space Power Combining , 2011, IEEE Transactions on Microwave Theory and Techniques.

[9]  A. Babakhani,et al.  A 77-GHz Phased-Array Transceiver With On-Chip Antennas in Silicon: Transmitter and Local LO-Path Phase Shifting , 2006, IEEE Journal of Solid-State Circuits.

[10]  S. Glisic,et al.  A fully integrated 60 GHz transmitter front-end with a PLL, an image-rejection filter and a PA in SiGe , 2008, ESSCIRC 2008 - 34th European Solid-State Circuits Conference.

[11]  U.R. Pfeiffer,et al.  A 20 dBm Fully-Integrated 60 GHz SiGe Power Amplifier With Automatic Level Control , 2007, IEEE Journal of Solid-State Circuits.

[12]  K. Aufinger,et al.  Integrated Bandpass Filter at 77 GHz in SiGe Technology , 2007, IEEE Microwave and Wireless Components Letters.

[13]  A. Hajimiri,et al.  A Wideband 77-GHz, 17.5-dBm Fully Integrated Power Amplifier in Silicon , 2006, IEEE Journal of Solid-State Circuits.

[14]  U.R. Pfeiffer.  A 20dBm Fully-Integrated 60GHz SiGe Power Amplifier with Automatic Level Control , 2006, 2006 Proceedings of the 32nd European Solid-State Circuits Conference.

[15]  P. Garcia,et al.  A Wideband W-Band Receiver Front-End in 65-nm CMOS , 2008, IEEE Journal of Solid-State Circuits.

[16]  Lei Zhou,et al.  A Single-Chip Dual-Band 22-29-GHz/77-81-GHz BiCMOS Transceiver for Automotive Radars , 2009, IEEE J. Solid State Circuits.