Determination of surface‐state parameters from transfer‐loss measurements in CCD’s

A novel experimental method is described that allows the determination of surface‐state capture cross section for minority carriers and the calculation of surface‐state densities from transfer‐loss measurements in surface channel CCD’s. Using two‐level polysilicon two‐phase n‐channel CCD’s, σn(E) was found to vary between about 5×10−17 and 2×10−16 cm2, and Nss(E) between 1.7×1011 and 9×109 cm−2 eV−1 in an energy range of 0.05 to 0.42 eV below the conduction‐band edge.