True two-phase CCD image sensors employing a transparent gate

This paper describes the performance of a family of full- frame sensor designed where a transparent electrode replaces one of the polysilicon gates. The sensors are all fabricated with a true two-phase buried channel CCD process that is optimized for operation in multi-pinned phase mode for low dark current. The true two-phase architecture provides many advantages such as progressive scan, square pixels, high charge capacity, and simplified drive requirements. The uncomplicated structure allows large area arrays to be fabricated with reasonable yield. Inclusion of a transparent gate increases the response by a factor of 10 at 400 nm and 50 percent at 600 nm.