Novel semiconductor nanostructures by functional self-organized epitaxy

[1]  R. Nötzel,et al.  Exciton capture and losses in a stacked submicron array of sidewall quantum wires on patterned GaAs ( 311 ) A substrates , 1999 .

[2]  R. Nötzel,et al.  Selective electroluminescence from a single stack of sidewall quantum wires on patterned GaAs (311)A substrates , 1999 .

[3]  R. Nötzel,et al.  PATTERNED GROWTH ON GAAS (311)A SUBSTRATES : ENGINEERING OF GROWTH SELECTIVITY FOR LATERAL SEMICONDUCTOR NANOSTRUCTURES , 1999 .

[4]  R. Nötzel,et al.  Self-limiting MBE growth and characterization of three-dimensionally confined nanostructures on patterned GaAs (311)A substrates , 1999 .

[5]  R. Nötzel,et al.  Device quality submicron arrays of stacked sidewall quantum wires on patterned GaAs (311)A substrates , 1998 .

[6]  T. Elsaesser,et al.  Real-Space Transfer and Trapping of Carriers into Single GaAs Quantum Wires Studied by Near-Field Optical Spectroscopy , 1997 .

[7]  R. Nötzel,et al.  Patterned growth on GaAs (3 1 1)A substrates , 1997 .

[8]  R. Nötzel,et al.  Enhancement of optical nonlinearity in strained (InGa)As sidewall quantum wires on patterned GaAs (311)A substrates , 1997 .

[9]  R. Nötzel,et al.  Patterned growth on high‐index GaAs (n11) substrates: Application to sidewall quantum wires , 1996 .

[10]  R. Nötzel,et al.  Micro-Photoluminescence Study at Room Temperature of Sidewall Quantum Wires Formed on Patterned GaAs (311)A Substrates by Molecular Beam Epitaxy , 1996 .

[11]  R. Nötzel,et al.  Selectivity of growth on patterned GaAs (311)A substrates , 1996 .

[12]  A. Cho,et al.  Growth of GaAs‐Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two‐dimensional thin‐film definition , 1977 .