论文信息 - Red VCSEL for high-temperature applications

Red VCSEL for high-temperature applications

Abstract Measured power–current curves of 660 nm AlGaInP-based oxide-confined vertical-cavity surface-emitting lasers (VCSEL) are compared with calculated data by a cylindrical heat dissipation model to improve heat removal out of the device. Pulsed lasing operation of a 670 nm VCSEL at high temperatures is demonstrated. At +120 °C heat sink temperature we exceeded 0.5 mW and at +160 °C still 25 μ W output power were achieved.

[1] Andrea Knigge,et al. High efficiency AlGaInP-based 650 nm vertical-cavity surface-emitting lasers , 2001 .

[2] M. Weyers,et al. Optimization of MOVPE growth for 650 nm-emitting VCSELs , 2000 .

[3] R. Schneider,et al. Uniparabolic mirror grading for vertical cavity surface emitting lasers , 1996 .

[4] W. Richter,et al. MOVPE process development for 650 nm VCSELS using optical in-situ techniques , 2002 .

[5] G. R. Hadley,et al. Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers , 1997 .

[6] John D. Lambkin,et al. 80/spl deg/C continuous wave operation of AlGaInP based visible VCSEL , 2002 .

[7] M. Osinski,et al. Thermal resistance of top-surface-emitting vertical-cavity semiconductor lasers and monolithic two-dimensional arrays , 1992 .

[8] B. Raabe,et al. 160/spl deg/C pulsed laser operation of AlGaInP-based vertical-cavity surface-emitting lasers , 2003 .

[9] Adriana Passaseo,et al. Oxidation kinetics of AlAs and (AlGa)As layers in GaAs-based diode laser structures: comparative analysis of available experimental data , 2004 .