论文信息 - Current suppression induced by conduction‐band discontinuity in Al0.35Ga0.65As‐GaAs N‐p heterojunction diodes

Current suppression induced by conduction‐band discontinuity in Al0.35Ga0.65As‐GaAs N‐p heterojunction diodes

Curent suppression in Al0.35Ga0.65As‐GaAs N‐p heterojunctions is observed experimentally. The data are explained by examining the carrier transport modified by electron accumulation in the interface potential notch resulting from the conduction‐band discontinuity. In addition, it is found that the temperature dependent I‐V measurements can be used to deduce the magnitude of ΔEC at the junction interface.

E. S. Yang | E. Yang | C. M. Wu

[1] R. Rediker,et al. The graded‐gap Alx Ga1 − x As–GaAs heterojunction , 1972 .

[2] R. Nelson,et al. Interfacial recombination velocity in GaAlAs/GaAs heterostructures , 1978 .

[3] T. H. Windhorn,et al. Al0.5Ga0.5As‐GaAs heterojunction phototransistors grown by metalorganic chemical vapor deposition , 1979 .

[4] A. Milnes,et al. Chapter 1 – Introduction to Semiconductor Heterojunctions , 1972 .

[5] D. Feucht,et al. Barrier determinations on Ge–AlxGa1−xAs and GaAs–AlxGa1−xAs p‐n heterojunctions , 1973 .

[6] I. Petrescu-Prahova,et al. Spike-notch structure of (AlGa)As heterojunctions , 1976, IEEE Transactions on Electron Devices.

[7] A. G. Milnes,et al. Heterojunctions and Metal Semiconductor Junctions , 1972 .

[8] A. Cho,et al. Photocollection efficiency and interface charges of MBE‐grown abrupt p (GaAs) ‐N (Al0.33Ga0.67As) heterojunctions , 1978 .

[9] E. Yang,et al. Physical mechanisms of carrier leakage in DH injection lasers , 1978 .

[10] A. Ghosh,et al. SnO2/Si solar cells—heterostructure or Schottky‐barrier or MIS‐type device , 1978 .