Epitaxial Growth of Thin Films of Ferroelectric Materials at Low Temperature by Excimer Laser Ablation Technique

We have formed PbTIO thin films on SrTiO 3 substrate (100) at low temperature of 350°C using an ArF excimer laser ablation technique. Until now, the PbTiO 3 films have not been formed at the temperature lower than 500°C using other thin film techniques. The Important points In the present study are the laser excitation of the substrate during the film growth and the lattice matching between the film and the substrate. The film deposited on the SrTiO 3 substrate, shows preferential orientation of the c-axis perpendicular to the substrate surface.