GaAs Tunnel Diode With Electrostatically Doped n-Region: Proposal and Analysis

In n-type GaAs, the electron concentration saturates to a value close to 1019 /cm3 even when the chemically doped impurity concentration is more than the value. Therefore, the peak current density in GaAs-based tunnel diodes is limited by the difficulty in realizing the n-type GaAs using dopant diffusion. In this brief, we demonstrate that the n-type region can be electrostatically induced in p-type GaAs using a metal electrode of appropriate work function. This obviates the need for n-type chemical impurity doping in GaAs. Using calibrated 2-D simulations, we demonstrate that the proposed GaAs tunnel diode with electrostatically doped n-region on p-type GaAs not only exhibits significantly improved peak current but also is easy to fabricate.

[1]  A. Pasquarello,et al.  Origin of Fermi-level pinning at GaAs surfaces and interfaces , 2014, Journal of physics. Condensed matter : an Institute of Physics journal.

[2]  M. Jagadesh Kumar,et al.  Vertical Bipolar Charge Plasma Transistor with Buried Metal Layer , 2015, Scientific Reports.

[3]  Makoto Konagai,et al.  Carbon Diffusion Behavior in a GaAs Tunnel Junction with a Heavily Carbon Doped p+-Layer by Metalorganic Molecular Beam Epitaxy , 1997 .

[4]  M. J. Kumar,et al.  Junctionless Impact Ionization MOS: Proposal and Investigation , 2014, IEEE Transactions on Electron Devices.

[5]  K. Saraswat,et al.  Metal/III-V effective barrier height tuning using atomic layer deposition of high-κ/high-κ bilayer interfaces , 2011 .

[6]  L. Beji,et al.  High Quality p+–n+-GaAs Tunnel Junction Diode Grown by Atmospheric Pressure Metalorganic Vapour Phase Epitaxy , 2001 .

[7]  R. Kopf,et al.  Beryllium δ doping of GaAs grown by molecular beam epitaxy , 1990 .

[8]  M. Jagadesh Kumar,et al.  Schottky Collector Bipolar Transistor Without Impurity Doped Emitter and Base: Design and Performance , 2013, IEEE Transactions on Electron Devices.

[9]  M. Carroll,et al.  Record PVCR GaAs-based tunnel diodes fabricated on Si substrates using aspect ratio trapping , 2008, 2008 IEEE International Electron Devices Meeting.

[10]  W. Walukiewicz,et al.  Intrinsic limitations to the doping of wide-gap semiconductors , 2001 .

[11]  Andreas W. Bett,et al.  Numerical simulation of tunnel diodes and multi-junction solar cells , 2008, 2008 33rd IEEE Photovoltaic Specialists Conference.

[12]  C. Salm,et al.  The Charge Plasma P-N Diode , 2008, IEEE Electron Device Letters.

[13]  Bijoy Rajasekharan,et al.  Fabrication and Characterization of the Charge-Plasma Diode , 2010, IEEE Electron Device Letters.

[14]  D. Abdi,et al.  Single Grain Boundary Dopingless PNPN Tunnel FET on Recrystallized Polysilicon: Proposal and Theoretical Analysis , 2015, IEEE Journal of the Electron Devices Society.

[15]  M. Konagai,et al.  Heavily carbon doped p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy , 1989 .

[16]  Jawar Singh,et al.  Charge-Plasma Based Process Variation Immune Junctionless Transistor , 2014, IEEE Electron Device Letters.

[17]  P. Kirsch,et al.  Benchmarking and improving III-V Esaki diode performance with a record 2.2 MA/cm2 peak current density to enhance TFET drive current , 2012, 2012 International Electron Devices Meeting.

[18]  J. Nishizawa,et al.  Ultra shallow sidewall GaAs tunnel junctions prepared by low-temperature area-selective epitaxial re-growth method , 2005 .

[19]  M. J. Kumar,et al.  Bipolar Charge-Plasma Transistor: A Novel Three Terminal Device , 2012, IEEE Transactions on Electron Devices.

[20]  M. J. Kumar,et al.  Doping-Less Tunnel Field Effect Transistor: Design and Investigation , 2013, IEEE Transactions on Electron Devices.

[21]  R. Newman.  The upper limits of useful n- and p-type doping in GaAs and AlAs , 1999 .

[22]  Kirchner,et al.  Different Fermi-level pinning behavior on n- and p-type GaAs(001). , 1993, Physical review. B, Condensed matter.