Enhanced Forward Bias Operation of 4H-SiC PiN Diodes Using High Temperature Oxidation
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C. Fisher | P. Mawby | Y. Sharma | S. M. Thomas | D. Hamilton | P. Gammon | M. Jennings | A. Pérez‐Tomás | S. Burrows | Fan Li
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C. Fisher | P. Mawby | Y. Sharma | S. M. Thomas | D. Hamilton | P. Gammon | M. Jennings | A. Pérez‐Tomás | S. Burrows | Fan Li