Photoluminescence investigation of InGaAs‐InP quantum wells
暂无分享,去创建一个
J. P. André | J. N. Patillon | E. P. Menu | P. Gentric | D. Moroni | Ph. Gentric | E. Menu | J. André | D. Moroni | J. Patillon
[1] B L H Wilson,et al. Gallium Arsenide and Related Compounds , 1973 .
[2] W. Tsang. Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm , 1984 .
[3] E. Menu,et al. High mobility of two-dimensional electrons in Ga1−xInxAs/InP heterostructures grown by atmospheric pressure MOVPE , 1986 .
[4] D. C. Reynolds,et al. Shallow impurity levels in AlGaAs/GaAs semiconductor quantum wells , 1986 .
[5] W. Tsang,et al. Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy , 1986 .
[6] S. J. Bass,et al. Investigation of InGaAs-InP quantum wells by optical spectroscopy , 1986 .
[7] E. Kuphal,et al. Photoluminescence of Mn- and Un-doped Ga0.47In0.53As on InP , 1984 .
[8] D. Bimberg,et al. Localization induced electron‐hole transition rate enhancement in GaAs quantum wells , 1984 .
[9] J. Samson,et al. Measured cross sections for the photoionization of ground state He to He/sup +/(n=2) , 1980 .
[10] S. Chu,et al. Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy , 1986 .
[11] R. L. Barns,et al. Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−y lattice matched to InP , 1978 .
[12] Leroy L. Chang,et al. Cyclotron Resonance and Far-Infrared Magneto-Absorption Experiments on Semimetallic InAs-GaSb Superlattices, , 1980 .
[13] G. B. Stringfellow,et al. Characterization of GaxIn1−xAs grown with TMIn , 1985 .
[14] G. B. Stringfellow,et al. GaInAs/InP quantum wells grown by organometallic vapor phase epitaxy , 1985 .
[15] J. Ballantyne,et al. Growth of high quality GaInAs on InP buffer layers by metalorganic chemical vapor deposition , 1985 .
[16] U. Koren,et al. High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxy , 1986 .
[17] A. Cho,et al. 1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy , 1983 .
[18] G. Bastard,et al. Optical selection rules in superlattices in the envelope-function approximation , 1984 .
[19] M. Razeghi,et al. Growth of Ga0.47In0.53As‐InP quantum wells by low pressure metalorganic chemical vapor deposition , 1983 .
[20] H. Queisser,et al. Alloy broadening in photoluminescence spectra ofAlxGa1−xAs , 1984 .