论文信息 - Dose Rate Upset Investigations on the Xilinx Virtex IV Field Programmable Gate Arrays

Dose Rate Upset Investigations on the Xilinx Virtex IV Field Programmable Gate Arrays

The following paper describes the results of ionizing dose rate investigations into upset, supply photocurrent, latch-up, and burnout susceptibility of the Xilinx Virtex IV XC4VFX12. All investigations were performed on a commercial version of the device. The maximum no-upset dose rate was 2.8times108 rad(Si)/s. Photocurrent amplitudes as a function of dose rate were recorded.

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