论文信息 - III–V gate stack interface improvement to enable high mobility 11nm node CMOS - 字舞流文

III–V gate stack interface improvement to enable high mobility 11nm node CMOS

Y. T. Chen | J. Woicik | G. Bersuker | D. Veksler | P. Kirsch | R. Jammy | P. Lysaght | J. Huang | R. Hill | C. Weiland | J. Price | J. Oh | J. Lee