ZnMgSeTe Light Emitting Diodes

The MBE growth of light emitting diodes based on junctions between n‐ZnMgSe and p‐ZnMgSeTe is reported. For optimized compositions of the n‐ and p‐layer, doping levels as high as n=p=2×1018 cm−3 were obtained. The p contacts of these diodes are ohmic, and the voltage needed to achieve a given current density is comparable to that of the best ZnSe based p‐n junctions reported in the literature. The diodes show green electroluminescence up to room temperature.

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