Non-quasi-static models including all injection levels and DC, AC, and transient emitter crowding in bipolar transistors
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[1] N. H. Fletcher,et al. Some Aspects of the Design of Power Transistors , 1955, Proceedings of the IRE.
[2] J.E. Schutt-Aine. Determination of a small-signal model for ion-implanted microwave transistors , 1983, IEEE Transactions on Electron Devices.
[3] L. F. Wagner,et al. The generation of three-dimensional bipolar transistor models for circuit analysis , 1985 .
[4] Mohammed S. Ghausi,et al. Introduction to distributed-parameter networks: With application to integrated circuits , 1977 .
[5] F. A. Lindholm,et al. One-dimensional non-quasi-static models for arbitrarily and heavily doped quasi-neutral layers in bipolar transistors , 1989 .
[6] D. Tang,et al. Switch-on transient of shallow-profile bipolar transistors , 1985, IEEE Transactions on Electron Devices.
[7] J.E. Lary,et al. Effective base resistance of bipolar transistors , 1985, IEEE Transactions on Electron Devices.
[8] R. L. Pritchard,et al. Two-Dimensional Current Flow in Junction Transistors at High Frequencies , 1958, Proceedings of the IRE.
[9] E. M. Buturla,et al. Finite-element analysis of semiconductor devices: the FIELDAY program , 1981 .
[10] J. R. Hauser,et al. The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometries , 1964 .
[11] F. A. Lindholm,et al. One-dimensional all injection nonquasi-static models for arbitrarily doped quasi-neutral layers in bipolar junction transistors including plasma-induced energy-gap narrowing , 1990 .
[12] H. N. Ghosh,et al. A distributed model of the junction transistor and its application in the prediction of the emitter-base diode characteristic, base impedance, and pulse response of the device , 1965 .
[13] J. Slotboom,et al. Computer-aided two-dimensional analysis of bipolar transistors , 1973 .
[14] Energy-gap and electron-affinity contractions and their importance in bipolar device simulators , 1988, Proceedings of the 1988 Bipolar Circuits and Technology Meeting,.
[15] W. L. Engl,et al. High injection in a two-dimensional transistor , 1974 .
[16] J. Liou,et al. A two-dimensional model for emitter-base junction capacitance of bipolar transistors , 1988 .
[17] H. C. Poon,et al. An integral charge control model of bipolar transistors , 1970, Bell Syst. Tech. J..
[18] H.C. de Graaff,et al. New formulation of the current and charge relations in bipolar transistor modeling for CACD purposes , 1985, IEEE Transactions on Electron Devices.
[19] Evidence for excess carrier storage in electron-hole plasma in silicon transistors , 1985, IEEE Electron Device Letters.
[20] The effect of high injection on the density of states of silicon , 1988, Proceedings of the 1988 Bipolar Circuits and Technology Meeting,.
[22] W. R. Eisenstadt,et al. A physics-based current-dependent base resistance mode; for advanced bipolar transistors , 1988 .