85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications
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R. Chau | S. Datta | M. Doczy | T. Ashley | M. Emeny | D. Hayes | K. Hilton | R. Jefferies | T. Martin | D. Wallis | P. Wilding | J. Brask | L. Buckle | T. Phillips