Three-Dimensionally and Stackable C-Axis-Aligned Crystalline Indium-Gallium-Zinc Oxide Field-Effect Transistor with Gate Length of 6.8-nm
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S. Yamazaki | Y. Asami | M. Kurata | S. Sasagawa | T. Murakawa | M. Oota | Masahiro Takahashi | R. Hodo | H. Kunitake | K. Tsuda | Hiromi Sawai | Toshikazu Ono | M. Nakano | S. Saito | N. Okuno | T. Hamada | Toshiya Endo | K. Sugaya | Masahiro Wakuda