Electric Resistivity Measurements of Sb2Te3 and Ge2Sb2Te5 Melts Using Four-Terminal Method
暂无分享,去创建一个
Rui Lan | Masashi Kuwahara | R. Lan | M. Kuwahara | M. Susa | Yoshinao Kobayashi | Yoshinao Kobayashi | Rie Endo | Shimpei Maeda | Yuri Jinnai | Masahiro Susa | R. Endo | S. Maeda | Y. Jinnai
[1] M. Salinga,et al. A map for phase-change materials. , 2008, Nature materials.
[2] B. Monaghan. A Four-Probe dc Method for Measuring the Electrical Resistivities of Molten Metals , 1999 .
[3] G. L. Pearson,et al. Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus , 1949 .
[4] Richard Dronskowski,et al. The role of vacancies and local distortions in the design of new phase-change materials. , 2007, Nature materials.
[5] R. Blakeway. Electronic properties of liquid binary alloys , 1969 .
[6] A. Wu,et al. Temperature and concentration dependence of the electrical resistivity of liquid indium-tin alloys , 2007 .
[7] R. G. Ross,et al. Equation of state and electrical resistivity of liquid mercury at elevated temperatures and pressures , 1967 .
[8] S. Udagawa,et al. Thermal Expansion and Microstructure of Cordierite and Minllite Composite , 1985 .
[9] H. Endo,et al. The Electric Resistivity of the Metals in the Molten State , 1962 .
[10] Inoue,et al. Valence-band changes in Sb2-xInxTe3 and Sb2Te3-ySey by transport and Shubnikov-de Haas effect measurements. , 1995, Physical review. B, Condensed matter.
[11] T. Yagi,et al. Measurement of the thermal conductivity of nanometer scale thin films by thermoreflectance phenomenon , 2007 .
[12] R. O. Jones,et al. Density functional study of amorphous, liquid and crystalline Ge2Sb2Te5: homopolar bonds and/or AB alternation? , 2008, Journal of physics. Condensed matter : an Institute of Physics journal.
[13] B. Onderka,et al. Electrical Resistivity of Liquid Sb-Te Solutions , 1998 .
[14] J. Enderby,et al. Electrical properties of some liquid semiconductors , 1966 .
[15] W. Fulkerson,et al. Thermal Conductivity, Electrical Resistivity, and Seebeck Coefficient of Silicon from 100 to 1300°K , 1968 .
[16] M. Pokorny,et al. Temperature dependence of the electrical resistivity of liquid tin between 214 degrees C and 705 degrees C , 1975 .
[17] M. Lankhorst,et al. Low-cost and nanoscale non-volatile memory concept for future silicon chips , 2005, Nature materials.
[18] Keiji Tanaka,et al. Electronic Properties of Amorphous and Crystalline Ge2Sb2Te5 Films , 2005 .
[19] R. Guthrie,et al. The physical properties of liquid metals , 1988 .
[20] T. Itami,et al. Anomalous behaviours of the electrical resistivity of the melt of a typical III-V Ga-Sb system , 1999 .
[21] A Reversible Change of Reflected Light Intensity between Molten and Solidified Ge–Sb–Te Alloy , 2007 .
[22] W. W. Warren. Nuclear Magnetic Resonance and Relaxation in the "Liquid Semiconductors" In 2 Te 3 , Ga 2 Te 3 , and Sb 2 Te 3 , 1971 .