Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures
暂无分享,去创建一个
Mikael Broas | Frank Altmann | Andreas Graff | Michél Simon-Najasek | David Poppitz | Helmut Jung | Hervé Blanck | H. Blanck | A. Graff | F. Altmann | D. Poppitz | M. Broas | H. Jung | M. Simon-Najasek
[1] J. M. Gibson,et al. The effects of elastic relaxation on transmission electron microscopy studies of thinned composition-modulated materials , 1986 .
[2] R F Webbink. Binary systems. , 1979, Science.
[3] Satish P. Singhal,et al. The Au−Pt (Gold-Platinum) system , 1981 .
[4] Carl V. Thompson,et al. Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors , 2010 .
[5] Hervé Blanck,et al. Reliability behavior of GaN HEMTs related to Au diffusion at the Schottky interface , 2009 .
[6] Susanne Hübner,et al. Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures , 2014, Microelectron. Reliab..
[7] P. Franke,et al. Binary Systems. Part 5: Binary Systems Supplement 1 , 2007 .
[8] Filip Tuomisto,et al. Low energy electron beam induced vacancy activation in GaN , 2012 .
[9] Gaudenzio Meneghesso,et al. Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias , 2012 .
[10] H. Okamoto,et al. The Au−Pt (Gold-Platinum) system , 1985 .
[11] U. Mishra,et al. AlGaN/GaN HEMTs-an overview of device operation and applications , 2002, Proc. IEEE.
[12] G. G. Stokes. "J." , 1890, The New Yale Book of Quotations.
[13] J. Flanagan,et al. Quantitative analysis of the accuracy and sensitivity of strain measurements from nanobeam electron diffraction , 2015, 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits.
[14] Gaudenzio Meneghesso,et al. AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction , 2013, IEEE Transactions on Electron Devices.
[15] Jungwoo Joh,et al. GaN HEMT reliability , 2009, Microelectron. Reliab..
[16] James S. Speck,et al. Infrared absorption of hydrogen-related defects in ammonothermal GaN , 2016 .
[17] Filip Tuomisto,et al. Thermally assisted recovery of low energy electron beam irradiation induced optical degradation of GaN , 2013 .
[18] Jean-Michel Hartmann,et al. Improved precision in strain measurement using nanobeam electron diffraction , 2009 .
[19] Fernando Ponce,et al. Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques , 1996 .