Analysis of Factors Contributing to Common-Base Avalanche Instabilities in Advanced SiGe HBTs
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[1] David R. Greenberg,et al. A doping concentration-dependent upper limit of the breakdown voltage–cutoff frequency product in Si bipolar transistors , 2004 .
[2] J.D. Cressler. Emerging SiGe HBT reliability issues for mixed-signal circuit applications , 2004, IEEE Transactions on Device and Materials Reliability.
[3] Hans-Martin Rein,et al. Influence of impact-ionization-induced instabilities on the maximum usable output voltage of Si-bipolar transistors , 2001 .
[4] J. D. Chlipala,et al. Explosion of poly-silicide links in laser programmable redundancy for VLSI memory repair , 1989 .
[5] D. Burnett,et al. A comparison of base current reversal and bipolar snapback in advanced n-p-n bipolar transistors , 1991, IEEE Electron Device Letters.