Effect of plasma-surface interactions on the radial variation of H atom density in a hydrogen radio frequency discharge

The effect of plasma surface interactions on the radial variation of H atom density has been measured in a low pressure pure H2 rf discharge by two‐photon (electric quadrupole and magnetic dipole) allowed laser induced fluorescence using a standard reference cell. Measurements were made in the pressure range from 0.5 to 7 Torr and at a rf power of 35 W into the plasma. The influence of different electrode materials on the H atom density close to the electrode surface and in the discharge volume was measured. The data shows that the radial density distribution, under our discharge conditions, is primarily determined by the plasma‐surface interactions and not by the discharge current uniformity (or nonuniformity). We have clearly demonstrated the ability of this measurement technique to monitor in situ, plasma induced surface property changes.

[1]  A. Tserepi,et al.  Two‐photon absorption laser‐induced fluorescence of H atoms: A probe for heterogeneous processes in hydrogen plasmas , 1994 .

[2]  David B. Graves,et al.  The Gaseous Electronics Conference radio‐frequency reference cell: A defined parallel‐plate radio‐frequency system for experimental and theoretical studies of plasma‐processing discharges , 1994 .

[3]  James W. Taylor,et al.  Role of contaminants in electron cyclotron resonance plasmas , 1993 .

[4]  T. Vincent,et al.  Radial optical emission profiles of radio frequency glow discharges , 1993 .

[5]  Loureiro.  Time-dependent electron kinetics in N2 and H2 for a wide range of the field frequency including electron-vibration superelastic collisions. , 1993, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics.

[6]  R. Nemanich,et al.  Plasma Surface Interactions and Surface Properties for Remote H-Plasma Cleaning of Si(100) , 1993 .

[7]  L. Berry,et al.  Contamination by sputtering in mirror field electron cyclotron resonance microwave plasma sources , 1992 .

[8]  N. Mutsukura,et al.  Deposition mechanism of hydrogenated hard‐carbon films in a CH4 rf discharge plasma , 1992 .

[9]  Angeliki Tserepi,et al.  H atom plasma diagnostics: A sensitive probe of temperature and purity , 1992 .

[10]  Mark A. Sobolewski,et al.  Mass spectrometric and optical emission diagnostics for rf plasma reactors , 1992, Other Conferences.

[11]  Peter K. Bachmann,et al.  Towards a general concept of diamond chemical vapour deposition , 1991 .

[12]  P. Koidl,et al.  Ion and electron dynamics in the sheath of radio‐frequency glow discharges , 1991 .

[13]  Herbert H. Sawin,et al.  Ion bombardment in rf plasmas , 1990 .

[14]  Kenji Kobayashi,et al.  Plasma sheath thickness in radio-frequency discharges , 1990 .

[15]  G. C. Nieman,et al.  Heterogeneous processes in CF4/O2 plasmas probed using laser-induced fluorescence of CF2 , 1990 .

[16]  R. Gottscho,et al.  Real‐time monitoring of low‐temperature hydrogen plasma passivation of GaAs , 1990 .

[17]  A. Phelps.  Cross Sections and Swarm Coefficients for H+, H2+, H3+, H, H2, and H− in H2 for Energies from 0.1 eV to 10 keV , 1990 .

[18]  R. Gottscho,et al.  Temporally resolved laser diagnostic measurements of atomic hydrogen concentrations in RF plasma discharges , 1989 .

[19]  B. Doyle,et al.  Simultaneous gas‐ and plasma‐driven hydrogen transport in solids , 1987 .

[20]  Douglass E. Post,et al.  Physics of Plasma-Wall Interactions in Controlled Fusion , 1986, Springer US.

[21]  R. Behrisch,et al.  Sputtering by Particle Bombardment III , 1981 .

[22]  J. Coburn,et al.  Positive‐ion bombardment of substrates in rf diode glow discharge sputtering , 1972 .

[23]  S. Vepřek,et al.  The preparation of thin layers of Ge and Si by chemical hydrogen plasma transport , 1968 .

[24]  Edwin E. Salpeter,et al.  THE INTERSTELLAR ABUNDANCE OF THE HYDROGEN MOLECULE. I. BASIC PROCESSES , 1963 .