Dislocation generation in GaN heteroepitaxy

[1]  James S. Speck,et al.  STRUCTURAL ORIGIN OF V-DEFECTS AND CORRELATION WITH LOCALIZED EXCITONIC CENTERS IN INGAN/GAN MULTIPLE QUANTUM WELLS , 1998 .

[2]  S. Denbaars,et al.  Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy , 1997 .

[3]  F. Ponce,et al.  Observation of coreless dislocations in α-GaN , 1997 .

[4]  Michael S. Shur,et al.  Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes , 1997 .

[5]  E. C. Carr,et al.  CORRELATION OF CATHODOLUMINESCENCE INHOMOGENEITY WITH MICROSTRUCTURAL DEFECTS IN EPITAXIAL GAN GROWN BY METALORGANIC CHEMICAL-VAPOR DEPOSITION , 1997 .

[6]  James S. Speck,et al.  Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3 , 1996 .

[7]  M. Osinski,et al.  AlGaN/InGaN/GaN blue light emitting diode degradation under pulsed current stress , 1996 .

[8]  J. Speck,et al.  Microstructural instability in single-crystal thin films , 1996 .

[9]  James S. Speck,et al.  Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition , 1996 .

[10]  James S. Speck,et al.  Nucleation layer evolution in metal‐organic chemical vapor deposition grown GaN , 1996 .

[11]  James S. Speck,et al.  Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films , 1996 .

[12]  M. Skowronski,et al.  Open‐core screw dislocations in GaN epilayers observed by scanning force microscopy and high‐resolution transmission electron microscopy , 1995 .

[13]  Fernando Ponce,et al.  High dislocation densities in high efficiency GaN‐based light‐emitting diodes , 1995 .

[14]  S. Nakamura,et al.  Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes , 1994 .

[15]  Theodore D. Moustakas,et al.  Growth of GaN by ECR-assisted MBE , 1993 .

[16]  Isamu Akasaki,et al.  Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE , 1989 .

[17]  I. Akasaki,et al.  Effect of AlN Buffer Layer on AlGaN/α-Al2O3 Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy , 1988 .