Semiconductor Sub‐Micro‐/ Nanochannel Networks by Deterministic Layer Wrinkling

we demonstrate a technology "Release and bond-back of layers (REBOLA)" that exploits the deterministic wrinkling of a semiconductor layer to create well-defined and versatile nanochannel networks. In linear networks, the periodicity of branch channels as a function of etch-width was analyzed and compared with theoretical calculations. A self-similar folding phenomenon of wrinkles near a fixed boundary was revealed by autocorrelation analysis. The formation of branch channels within circular networks was studied on different length scales and was controlled by the size of the etched circular network and the shape of the initial pattern. To elucidate the usefulness of REBOLA, we exemplified nanofluidic transport as well as femto-litre filling and emptying of individual wrinkles on a standard semiconductor substrate, in which corner flow played an important role.

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