Nanoscale current uniformity and injection efficiency of nanowire light emitting diodes

As an alternative to light emitting diodes (LEDs) based on thin films, nanowire based LEDs are the focus of recent development efforts in solid state lighting as they offer distinct photonic advantages and enable direct integration on a variety of different substrates. However, for practical nanowire LEDs to be realized, uniform electrical injection must be achieved through large numbers of nanowire LEDs. Here, we investigate the effect of the integration of a III-Nitride polarization engineered tunnel junction (TJ) in nanowire LEDs on Si on both the overall injection efficiency and nanoscale current uniformity. By using conductive atomic force microscopy (cAFM) and current-voltage (IV) analysis, we explore the link between the nanoscale nonuniformities and the ensemble devices which consist of many diodes wired in parallel. Nanometer resolved current maps reveal that the integration of a TJ on n-Si increases the amount of current a single nanowire can pass at a given applied bias by up to an order of mag...

[1]  Isamu Akasaki,et al.  P-TYPE CONDUCTION IN MG-DOPED GAN AND AL0.08GA0.92N GROWN BY METALORGANIC VAPOR PHASE EPITAXY , 1994 .

[2]  K. B. Nam,et al.  Optical and electrical properties of Al-rich AlGaN alloys , 2001 .

[3]  Mim Lal Nakarmi,et al.  Optical and electrical properties of Mg-doped p-type AlxGa1−xN , 2002 .

[4]  Shigehiko Hasegawa,et al.  Electron field emission from GaN nanorod films grown on Si substrates with native silicon oxides , 2005 .

[5]  F. Glas.  Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires , 2006 .

[6]  Hongwei Li,et al.  Direction‐Dependent Homoepitaxial Growth of GaN Nanowires , 2006 .

[7]  H. Lüth,et al.  Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy. , 2007, Nano letters.

[8]  C. Ning,et al.  Photoluminescence of GaN nanowires of different crystallographic orientations. , 2007 .

[9]  H. Lüth,et al.  Interface and wetting layer effect on the catalyst-free nucleation and growth of GaN nanowires. , 2008, Small.

[10]  Debdeep Jena,et al.  Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures , 2010, Science.

[11]  Hiroto Sekiguchi,et al.  Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate , 2010 .

[12]  Y. Désières,et al.  Optical anisotropy and light extraction efficiency of MBE grown GaN nanowires epilayers. , 2011, Optics express.

[13]  Le Si Dang,et al.  Submicrometre resolved optical characterization of green nanowire-based light emitting diodes , 2011, Nanotechnology.

[14]  M. Mills,et al.  Three-dimensional GaN/AlN nanowire heterostructures by separating nucleation and growth processes. , 2011, Nano letters.

[15]  Siddharth Rajan,et al.  Polarization-induced pn diodes in wide-band-gap nanowires with ultraviolet electroluminescence. , 2012, Nano letters.

[16]  O Brandt,et al.  Current path in light emitting diodes based on nanowire ensembles , 2012, Nanotechnology.

[17]  Z. Mi,et al.  Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiO(x) by catalyst-free molecular beam epitaxy. , 2013, Nanoscale.

[18]  R. Klie,et al.  Mixed polarity in polarization-induced p-n junction nanowire light-emitting diodes. , 2013, Nano letters.

[19]  Katsumi Kishino,et al.  Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors , 2012 .

[20]  Thomas F. Kent,et al.  Tuning the polarization-induced free hole density in nanowires graded from GaN to AlN , 2014 .

[21]  Z. Mi,et al.  Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature. , 2015, Nature nanotechnology.

[22]  O Brandt,et al.  Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film. , 2015, Nano letters.

[23]  R. Myers,et al.  Tunnel junction enhanced nanowire ultraviolet light emitting diodes , 2015 .

[24]  Fan Yang,et al.  Semiconductor Nanowire Light-Emitting Diodes Grown on Metal: A Direction Toward Large-Scale Fabrication of Nanowire Devices. , 2015, Small.

[25]  A. Allerman,et al.  Design and Demonstration of Ultra Wide Bandgap AlGaN Tunnel Junctions , 2016, 1608.08653.

[26]  Zetian Mi,et al.  Enhancing the light extraction efficiency of AlGaN deep ultraviolet light emitting diodes by using nanowire structures , 2016 .

[27]  Zetian Mi,et al.  Full-Color Single Nanowire Pixels for Projection Displays. , 2016, Nano letters.

[28]  Chao Shen,et al.  Facile Formation of High-Quality InGaN/GaN Quantum-Disks-in-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters. , 2016, Nano letters.

[29]  R. Myers,et al.  Nanowire LEDs grown directly on flexible metal foil , 2016 .

[30]  O. Brandt,et al.  Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil , 2016, 1602.06204.