Active gate control for high power IGBTs with separated gains

A novel active gate drive method for high power IGBTs is proposed in this paper. It makes use of 2 simple capacitors and several Transient Voltage Suppressors (TVS) to gain different feedback gains in different turn-off transient period, in order to suppress the turn-off over voltage and control turn-off voltage rise slope. Comprehensive study among several application oriented methods is carried out to show its advantages by Saber simulator. With consideration of device safety, an evaluation criterion for active gate drive circuit is proposed.

[1]  Fang Z. Peng,et al.  Closed-Loop Gate Drive for High Power IGBTs , 2009, 2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition.

[2]  F. Blaabjerg,et al.  Power Electronics in Renewable Energy Systems , 2006 .

[3]  P.J. Grbovic,et al.  Gate driver with feed forward control of turn off performances of an IGBT in short circuit conditions , 2007, 2007 European Conference on Power Electronics and Applications.

[4]  F. Blaabjerg,et al.  Power electronics for renewable energy systems , 2006, 2009 International Conference on Power Engineering, Energy and Electrical Drives.

[5]  Z.J. Shen,et al.  Voltage dependence of self-clamped inductive switching (SCIS) energy capability of IGBTs , 2000, IEEE Electron Device Letters.

[6]  S.J. Finney,et al.  Numerical Optimization of an Active Voltage Controller for High-Power IGBT Converters , 2007, IEEE Transactions on Power Electronics.

[7]  Robert W. Erickson,et al.  Fundamentals of Power Electronics , 2001 .

[8]  V. K. Sood,et al.  HVDC and FACTS Controllers: Applications of Static Converters in Power Systems , 2004 .

[9]  S. Pontarollo,et al.  A new gate driver integrated circuit for IGBT devices with advanced protections , 2006, IEEE Transactions on Power Electronics.

[10]  P.R. Palmer,et al.  Active Voltage control of IGBTs for high power applications , 2004, IEEE Transactions on Power Electronics.