论文信息 - Crystal lattice defects and Hall mobility of electrons in Si: Er/Si layers grown by sublimation molecular-beam epitaxy - 字舞流文

Crystal lattice defects and Hall mobility of electrons in Si: Er/Si layers grown by sublimation molecular-beam epitaxy

V. P. Kuznetsov | V. N. Shabanov | A. P. Kasatkin | E. V. Demidov | R. Rubtsova | G. Maksimov | Z. Krasilnik | S. V. Sedova