论文信息 - The epitaxial growth of silicon and germanium films on (111) silicon surfaces using UHV sublimation and evaporation techniques - 字舞流文

The epitaxial growth of silicon and germanium films on (111) silicon surfaces using UHV sublimation and evaporation techniques

A. Cullis | G. Booker

[1] M. Stowell. The dependence of saturation nucleus density on deposition rate and substrate temperature in the case of complete condensation , 1970 .

[2] B. Joyce,et al. The influence of substrate surface conditions on the nucleation and growth of epitaxial silicon films , 1969 .

[3] R. Logan. Saturation density of nuclei on a surface from the microscopic rate equations , 1969 .

[4] G. P. McCarthy,et al. Surface Processes in the Growth of Silicon on (111) Silicon in Ultrahigh Vacuum , 1968 .

[5] G. Booker,et al. A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques III. Nucleation rate measurements and the effect of oxygen on initial growth behaviour , 1967 .

[6] B. A. Joyce,et al. A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques: II. initial growth behaviour on clean and carbon-contaminated silicon substrates , 1966 .

[7] LeRoy G. Green,et al. THE HEATS OF FORMATION OF SOME UNSTABLE GASEOUS HYDRIDES1 , 1961 .