Resistance requirements of threshold switching selectors in 1S1R crossbar array
暂无分享,去创建一个
[1] S. Jo,et al. Cross-Point Resistive RAM Based on Field-Assisted Superlinear Threshold Selector , 2015, IEEE Transactions on Electron Devices.
[2] M. R. Uddin,et al. A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory , 2013, Nature Communications.
[3] M. Takenaka,et al. Ge/Si Heterojunction Tunnel Field-Effect Transistors and Their Post Metallization Annealing Effect , 2015, IEEE Transactions on Electron Devices.
[4] P. Narayanan,et al. Access devices for 3D crosspoint memorya) , 2014 .
[5] High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET With Low Thermal Budget Process , 2016, IEEE Electron Device Letters.