Multicolor Photoluminescence from Porous Silicon Using Focused, High‐Energy Helium Ions

–2 intensity. During photoirradiation, we monitored the optical texture of the blue phases with a polarizing optical microscope. Optical experiments were conducted with an optical microscope (IX71, Olympus) combined with spectrometers (USB2000, Ocean Optics). We focused the non-polarized white-light beam from a tungsten halogen light source (L7893, Hamamatsu Photonics) on the surface of the sample with a spot size of 30 lm in diameter through an objective (50, LC Plan Apo, Olympus). The spontaneous emission spectra from the blue phases were measured by using a continuouswave (CW) laser (532 nm, 0.13 mW, Edmund Optics), and lasing spectra were measured by a Q-switched Nd:YAG (yttrium aluminum garnet) laser (532 nm, 8 ns pulse, Polaris II, New Wave Research). The excitation energy was adjusted using a half-wave plate in combination with a polarizing prism. The excitation beam was conducted to the optical microscope and focused onto the sample surface through an objective (20, LC Plan Apo, Olympus) to obtain a spot size of about 50 lm. We collected the laser emission from the sample in transmission and analyzed the spectrum with a spectrometer (Spectra Pro. 150 and charge-coupled device (CCD) detector 256HB, Acton Research).

[1]  Kurt Busch,et al.  Silicon‐Based Photonic Crystals , 2001 .

[2]  D. J. Lockwood,et al.  Quantum confinement and light emission in SiO2/Si superlattices , 1995, Nature.

[3]  M. Paniccia,et al.  A continuous-wave Raman silicon laser , 2005, Nature.

[4]  Volker Lehmann,et al.  Electrochemistry of Silicon , 2002 .

[5]  Paul W. Bohn,et al.  Direct-write patterning of microstructured porous silicon arrays by focused-ion-beam Pt deposition and metal-assisted electroless etching , 2004 .

[6]  Andrew A. Bettiol,et al.  Controlled intensity emission from patterned porous silicon using focused proton beam irradiation , 2004 .

[7]  Sumio Matsuda,et al.  High-energy and high-fluence proton irradiation effects in silicon solar cells , 1996 .

[8]  J. Ziegler THE STOPPING AND RANGE OF IONS IN SOLIDS , 1988 .

[9]  L. Canham,et al.  Gaining light from silicon , 2000, Nature.

[10]  M. Sailor,et al.  Luminescent Color Image Generation on Porous Silicon , 1992, Science.

[11]  Nanocrystal size modifications in porous silicon by preanodization ion implantation , 1994 .

[12]  L. D. Negro,et al.  Optical gain in silicon nanocrystals , 2000, Nature.

[13]  A. G. Cullis,et al.  Visible light emission due to quantum size effects in highly porous crystalline silicon , 1991, Nature.

[14]  T. P. Lynch,et al.  Luminescent anodized silicon aerocrystal networks prepared by supercritical drying , 1994, Nature.

[15]  Z. Gaburro,et al.  EFFECT OF RESISTIVITY AND CURRENT DENSITY ON PHOTOLUMINESCENCE IN POROUS SILICON PRODUCED AT LOW HF CONCENTRATION , 1998 .

[16]  J. Jorné,et al.  Electronic States and Luminescence in Porous Silicon Quantum Dots: The Role of Oxygen , 1999 .

[17]  S. Kurinec,et al.  Enhancement and suppression of the formation of porous silicon , 1995 .

[18]  Jury V. Vandyshev,et al.  Blue emission in porous silicon: Oxygen-related photoluminescence. , 1994, Physical review. B, Condensed matter.

[19]  Michael J. Sailor,et al.  Surface chemistry of Luminescent Silicon Nanocrystallites , 1997 .

[20]  D. J. Lockwood,et al.  LIGHT EMITTING MICROPATTERNS OF POROUS SI CREATED AT SURFACE DEFECTS , 1998 .

[21]  Kevin M. Knowles Materials Analysis using a Nuclear Microprobe , 1998 .

[22]  L. Canham Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers , 1990 .

[23]  A. Hallén,et al.  Point defects in MeV ion-implanted silicon studied by deep level transient spectroscopy , 1995 .

[24]  C. Bardeen,et al.  Self‐Assembly Combined with Photopolymerization for the Fabrication of Fluorescence “Turn‐On” Vesicle Sensors with Reversible “On–Off” Switching Properties , 2006 .

[25]  K. D. Hirschman,et al.  Silicon-based visible light-emitting devices integrated into microelectronic circuits , 1996, Nature.

[26]  Feng Yan,et al.  INFLUENCE OF ION IRRADIATION DAMAGE ON PROPERTIES OF POROUS SILICON , 1996 .

[27]  Donald J. Sirbuly,et al.  Patterned microstructures of porous silicon by dry-removal soft lithography , 2003 .

[28]  Ferenc Masszi,et al.  Lifetime in proton irradiated silicon , 1996 .

[29]  Metal-aided electrochemical etching of silicon for ambient red to blue photoluminescence , 2001 .

[30]  Andrew A. Bettiol,et al.  Three-dimensional nanolithography using proton beam writing , 2003 .

[31]  Corbett,et al.  Divacancy acceptor levels in ion-irradiated silicon. , 1991, Physical review. B, Condensed matter.