Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor

We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) with gate length Lg = 100 nm. NC-FinFETs are constructed by connecting a high-quality epitaxial bismuth ferrite (BiFeO3) ferroelectric capacitor to the gate terminal of both n-type and p-type FinFETs. We show that a self-consistent simulation scheme based on Berkeley SPICE Insulated-Gate-FET Model:Common Multi Gate model and Landau-Devonshire formalism could quantitatively match the experimental NC-FinFET transfer characteristics. This also allows a general procedure to extract the effective S-shaped ferroelectric charge-voltage characteristics that provides important insights into the device operation.

[1]  D. Jimenez,et al.  Multidomain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors , 2010, 1103.3768.

[2]  Yogesh Singh Chauhan,et al.  FinFET modeling for IC simulation and design , 2015 .

[3]  C. Hu,et al.  Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation , 2011, 2011 International Electron Devices Meeting.

[4]  A. Bratkovsky,et al.  Depolarizing field and “real” hysteresis loops in nanometer-scale ferroelectric films , 2006, cond-mat/0608283.

[5]  Albert Chin,et al.  Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High- $\kappa$ Gate Dielectric , 2014, IEEE Electron Device Letters.

[6]  A. O'Neill,et al.  Experimental observation of negative capacitance in ferroelectrics at room temperature. , 2014, Nano letters.

[7]  Asif Khan,et al.  0.2V adiabatic NC-FinFET with 0.6mA/µm ION and 0.1nA/µm IOFF , 2015, 2015 73rd Annual Device Research Conference (DRC).

[8]  Sayeef Salahuddin,et al.  Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure. , 2014, Nano letters.

[9]  A. Ionescu,et al.  Metal-Ferroelectric-Meta-Oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification , 2010, 2010 International Electron Devices Meeting.

[10]  L. You,et al.  Negative capacitance in a ferroelectric capacitor. , 2014, Nature materials.

[11]  Chenming Hu,et al.  Low power negative capacitance FETs for future quantum-well body technology , 2013, 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

[12]  S. Datta,et al.  Use of negative capacitance to provide voltage amplification for low power nanoscale devices. , 2008, Nano letters.

[13]  M. H. Lee,et al.  Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics , 2015, IEEE Electron Device Letters.

[14]  J. Shim,et al.  Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices. , 2015, Nano letters.

[15]  Xiaoqing Pan,et al.  Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures , 2011, 1103.4419.