Temperature-Dependent $I$– $V$ Characteristics of a Vertical $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$

We report on the experimental temperature-dependent characteristics of vertical In0.53Ga0.47As tunnel field-effect transistors (TFETs) at low drain bias to provide key insight into its device operation and design. Leakage floor (IOFF) is determined by the ungated p+-i-n+ reverse bias leakage and is dominated by Shockley-Read-Hall generation-recombination current. The temperature dependence of subthreshold slope arises from tunneling into mid-gap states at the oxide-semiconductor interface, followed by thermal emission into the conduction band. At intermediate gate voltages, pure band-to-band tunneling dominates, while at higher gate voltages, current transport is diffusion limited. The temperature-dependent study of In0.53Ga0.47As TFET highlights the importance of passivating the III-V and dielectric interface.