论文信息 - Robust mm-wave large-signal time-domain FET model

Robust mm-wave large-signal time-domain FET model

In this paper, a robust large-signal time-domain model of multi-finger field effect transistors is presented. It efficiently includes wave propagation effects along the width of each finger and gate feeding line, making it suitable for mm-wave applications. The proposed model was demonstrated through a comparison between measured and simulated data of a 0.2µm pHEMT.

M.C.E. Yagoub | S. Asadi

[1] Allen Taflove,et al. Computational Electrodynamics the Finite-Difference Time-Domain Method , 1995 .

[2] Abdolali Abdipour,et al. Complete sliced model of microwave FET's and comparison with lumped model and experimental results , 1996 .

[3] Y. Watanabe,et al. An accurate distributed small signal FET model for millimeter-wave applications , 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).

[4] A. Santarelli,et al. Small-signal distributed FET modeling through electromagnetic analysis of the extrinsic structure , 1998, 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).

[5] Franco Giannini,et al. Physical/electromagnetic pHEMT modeling , 2003 .

[6] C. Paul,et al. Finite-difference, time-domain analysis of lossy transmission lines , 1996 .

[7] S. M. Sohel Imtiaz,et al. Global modeling of millimeter-wave circuits: electromagnetic simulation of amplifiers , 1997 .

[8] A. Platzker,et al. Distributed small signal model for multi-fingered GaAs PHEMT/MESFET devices , 1996, IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers.

[9] S.M. El-Ghazaly,et al. Large-signal circuit-based time domain analysis of high frequency devices including distributed effects , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).