Tuning the conductivity of vanadium dioxide films on silicon by swift heavy ion irradiation

We demonstrate the generation of a persistent conductivity increase in vanadium dioxide thin films grown on single crystal silicon by irradiation with 1 GeV 238U swift heavy ions at room temperature. VO2 undergoes a temperature driven metal-insulator-transition (MIT) at 67 °C. After room temperature ion irradiation with high electronic energy loss of 50 keV/nm the conductivity of the films below the transition temperature is strongly increased proportional to the ion fluence of 5·109 U/cm2 and 1·1010 U/cm2. At high temperatures the conductivity decreases slightly. The ion irradiation slightly reduces the MIT temperature. This observed conductivity change is persistent and remains after heating the samples above the transition temperature and subsequent cooling. Low temperature measurements down to 15 K show no further MIT below room temperature. Although the conductivity increase after irradiation at such low fluences is due to single ion track effects, atomic force microscopy (AFM) measurements do not sh...

[1]  Young-soo Park,et al.  Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory , 2007 .

[2]  Yoshinori Tokura,et al.  Correlated-electron physics in transition-metal oxides , 2003 .

[3]  F. Brisard,et al.  Damage of M-type baryum hexaferrites induced by GeV-heavy ion irradiations , 1995 .

[4]  Jacob O. Barnes,et al.  Electrical and optical switching properties of ion implanted VO2 thin films , 2009 .

[5]  Amit Kumar,et al.  Synthesis of confined electrically conducting carbon nanowires by heavy ion irradiation of fullerene thin film , 2007 .

[6]  K. Asai,et al.  Formation of metastable conductive nanowire in a thiospinel compound CuIr2S4 induced by ion irradiation , 2009 .

[7]  C. Trautmann,et al.  Highly conductive ion tracks in tetrahedral amorphous carbon by irradiation with 30 MeV C60 projectiles , 2011 .

[8]  William Paul,et al.  Optical and transport properties of high quality crystals of V2O4 near the metallic transition temperature , 1969 .

[9]  Lajos Tóth,et al.  Tracks induced by swift heavy ions in semiconductors , 2002 .

[10]  T. Furubayashi,et al.  X-ray-induced electrical conduction in the insulating phase of thiospinel CuIr2S4 , 2003, cond-mat/0304256.

[11]  John G. Simmons,et al.  Poole-Frenkel Effect and Schottky Effect in Metal-Insulator-Metal Systems , 1967 .

[12]  S. Ramanathan,et al.  Dispersive capacitance and conductance across the phase transition boundary in metal-vanadium oxide-silicon devices , 2009 .

[13]  C. Trautmann,et al.  Track formation and fabrication of nanostructures with MeV-ion beams , 2004 .

[14]  J. Jagielski,et al.  Damage induced by electronic excitation in ion-irradiated yttria-stabilized zirconia , 2009 .

[15]  M. Hervieu,et al.  Changes in magnetic properties of magnetite Fe3O4 ceramics induced by high energy heavy ion irradiation , 1996 .

[16]  S. Nagata.  Metal-Insulator Transition in the Thiospinel CuIr2S4 , 1994 .

[17]  Jochen Mannhart,et al.  Electrostatic modification of novel materials , 2006 .

[18]  Gyungock Kim,et al.  Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices , 2004 .

[19]  Michael Dudley,et al.  VO2 films with strong semiconductor to metal phase transition prepared by the precursor oxidation process , 2007 .

[20]  J. Feng,et al.  Magnetoelectric properties of magnetite thin films , 1975 .

[21]  Massimiliano Di Ventra,et al.  Phase-transition driven memristive system , 2009, 0901.0899.

[22]  H. Kokabi,et al.  Damage induced by high energy lead irradiation in (V0.997Cr0.003)2O3 ceramics , 1996 .

[23]  Field emission studies on swift heavy ion irradiated tetrahedral amorphous carbon , 2004 .

[24]  Meftah,et al.  Swift-uranium-ion-induced damage in sapphire. , 1995, Physical review. B, Condensed matter.

[25]  C. Kim,et al.  Effect of W doping in metal–insulator transition material VO2 by tunnelling spectroscopy , 2007 .

[26]  S. Ramanathan,et al.  In situ x-ray diffraction studies on epitaxial VO2 films grown on c-Al2O3 during thermally induced insulator-metal transition , 2010 .

[27]  S. Ramanathan,et al.  Geometric confinement effects on the metal-insulator transition temperature and stress relaxation in VO2 thin films grown on silicon , 2011 .

[28]  Mikk Lippmaa,et al.  Characterizing a strain-driven phase transition in VO2 , 2010 .

[29]  F. J. Morin,et al.  Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature , 1959 .

[30]  Dufour,et al.  Transient thermal process after a high-energy heavy-ion irradiation of amorphous metals and semiconductors. , 1992, Physical review. B, Condensed matter.

[31]  Meftah,et al.  Track formation in SiO2 quartz and the thermal-spike mechanism. , 1994, Physical review. B, Condensed matter.

[32]  Martin Kunz,et al.  Constant threshold resistivity in the metal-insulator transition of VO 2 , 2010 .

[33]  P. Jin,et al.  Tungsten doping into vanadium dioxide thermochromic films by high-energy ion implantation and thermal annealing , 1998 .

[34]  Shriram Ramanathan,et al.  Observation of electric field-assisted phase transition in thin film vanadium oxide in a metal-oxide-semiconductor device geometry , 2008 .

[35]  Sungyoul Choi,et al.  Electrical oscillations induced by the metal-insulator transition in VO2 , 2010 .

[36]  Takao Furubayashi,et al.  Structural and magnetic studies of metal-insulator transition in thiospinel CuIr2S4 , 1994 .

[37]  T. E. Haynes,et al.  Enhanced hysteresis in the semiconductor-to-metal phase transition of VO2 precipitates formed in SiO2 by ion implantation , 2001 .

[38]  C. Trautmann,et al.  Self-aligned nanostructures created by swift heavy ion irradiation , 2010 .

[39]  A. Cavalleri,et al.  Femtosecond Structural Dynamics in VO2 during an Ultrafast Solid-Solid Phase Transition. , 2001, Physical review letters.

[40]  H. Kokabi,et al.  Influence of high energy lead irradiation on the low and high temperature metal-semiconductor transitions in (V1 − xCrx)2O3 ceramics , 1997 .

[41]  Matteo Rini,et al.  Photoinduced phase transition in VO2 nanocrystals: ultrafast control of surface-plasmon resonance. , 2004, Optics letters.

[42]  S. Ramanathan,et al.  Nanoscale imaging and control of resistance switching in VO2 at room temperature , 2010 .

[43]  C. Trautmann,et al.  Structural modifications induced by swift heavy ions in cubic stabilized zirconia: An X-ray diffraction investigation , 2007 .

[44]  S. A. Shivashankar,et al.  Phase transformation and semiconductor-metal transition in thin films of VO2 deposited by low-pressure metalorganic chemical vapor deposition , 2002 .

[45]  D. Mainwaring,et al.  Electron transport properties of irradiated polyimide thin films in single track regime , 2009 .

[46]  M. Lux‐Steiner,et al.  Electrically conducting ion tracks in diamond-like carbon films for field emission , 1999 .

[47]  A. Crunteanu,et al.  Voltage- and current-activated metal–insulator transition in VO2-based electrical switches: a lifetime operation analysis , 2010, Science and technology of advanced materials.

[48]  D. Fink,et al.  Conductivity of single ion tracks in polymers , 1994 .

[49]  Gokul Gopalakrishnan,et al.  Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions , 2009 .

[50]  Shriram Ramanathan,et al.  Metal-insulator transition and electrically-driven memristive characteristics of SmNiO3 thin films , 2011 .

[51]  C. Dufour,et al.  The Ion-Matter Interaction with Swift Heavy Ions in the Light of Inelastic Thermal Spike Model , 2006 .

[52]  E. Bringa,et al.  Atomistic simulations of swift ion tracks in diamond and graphite , 2007 .

[53]  John B. Goodenough,et al.  The two components of the crystallographic transition in VO2 , 1971 .

[54]  A. S. Barker,et al.  Infrared Optical Properties of Vanadium Dioxide Above and Below the Transition Temperature , 1966 .

[55]  Shriram Ramanathan,et al.  Metal-insulator transition characteristics of VO2 thin films grown on Ge(100) single crystals , 2010 .

[56]  Alexander Pergament,et al.  Electrical switching and Mott transition in VO2 , 2000 .