论文信息 - High frequency (f=2.37 GHz) room temperature operation of 1.55 /spl mu/m AlN/GaN-based intersubband detector

High frequency (f=2.37 GHz) room temperature operation of 1.55 /spl mu/m AlN/GaN-based intersubband detector

The fabrication and high frequency operation of a room temperature 1.55 µm intersubband detector based on a regular AlN/GaN superlattice is reported. This photovoltaic device was capable of detecting a sinusoidally modulated laser beam at high frequencies of up to 2.37 GHz.

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