Low Power Operation of a Vertical Cavity Transistor Laser via the Reduction of Collector Offset Voltage
暂无分享,去创建一个
Milton Feng | Nick Holonyak | Michael Liu | N. Holonyak | M. Feng | Rohan Bambery | Mong-Kai Wu | Michael Liu | M. Wu | R. Bambery
[1] Johan S. Gustavsson,et al. High-speed 850 nm VCSELs operating error free up to 57 Gbit/s , 2013 .
[2] Milton Feng,et al. Voltage modulation of a vertical cavity transistor laser via intra-cavity photon-assisted tunneling , 2012 .
[3] Milton Feng,et al. Surface Emission Vertical Cavity Transistor Laser , 2012, IEEE Photonics Technology Letters.
[4] Milton Feng,et al. Laser operation of a heterojunction bipolar light-emitting transistor , 2004 .
[5] Hui Li,et al. Energy efficient 40 Gbit/s transmission with 850 nm VCSELs at 108 fJ/bit dissipated heat , 2013 .
[6] Milton Feng,et al. The effect of microcavity laser recombination lifetime on microwave bandwidth and eye-diagram signal integrity , 2011 .
[7] Milton Feng,et al. 850 nm Oxide-VCSEL With Low Relative Intensity Noise and 40 Gb/s Error Free Data Transmission , 2014, IEEE Photonics Technology Letters.
[8] Milton Feng,et al. Voltage and Current Modulation at 20 Gb/s of a Transistor Laser at Room Temperature , 2013, IEEE Photonics Technology Letters.
[9] Milton Feng,et al. Lateral feeding design and selective oxidation process in vertical cavity transistor laser , 2013 .
[10] H. Then,et al. Microwave determination of electron-hole recombination dynamics from spontaneous to stimulated emission in a quantum-well microcavity laser , 2010 .
[11] N. Holonyak,et al. The effect of ground and first excited state transitions on transistor laser relative intensity noise , 2013 .
[12] Milton Feng,et al. Resonance-free frequency response of a semiconductor laser , 2009 .
[13] Milton Feng,et al. Carrier lifetime and modulation bandwidth of a quantum well AlGaAs∕InGaP∕GaAs∕InGaAs transistor laser , 2006 .
[14] P. Westbergh,et al. Impact of Photon Lifetime on High-Speed VCSEL Performance , 2011, IEEE Journal of Selected Topics in Quantum Electronics.
[15] P. Westbergh,et al. High-Speed Oxide Confined 850-nm VCSELs Operating Error-Free at 40 Gb/s up to 85$^{\circ}{\rm C}$ , 2013, IEEE Photonics Technology Letters.
[16] Milton Feng,et al. Charge control analysis of transistor laser operation , 2007 .
[17] N. Holonyak,et al. Selective oxidization cavity confinement for low threshold vertical cavity transistor laser , 2013 .
[18] Milton Feng,et al. Relative intensity noise of a quantum well transistor laser , 2012 .
[19] H. Then,et al. 4.3 GHz optical bandwidth light emitting transistor , 2009 .