论文信息 - Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers

Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers

Interface states and electron spin resonance centers have been observed and compared in thermally oxidized (111) and (100) silicon wafers subjected to various processing treatments. The ESR Pb signal, previously assigned to interface ⋅Si≡Si3 defects on (111) wafers, was found to have two components on (100): an ⋅Si≡Si3 center oriented in accord with (100) face structure, and an unidentified center consistent with ⋅Si≡Si2O. The quantitative proportionality of Pb spin concentration to midgap interface trap density Dit is maintained on (100), and both are lower by a factor of about 3 compared to (111). This correlation persists over the range of oxidation temperatures 800–1200°C, for both n‐ and p‐doped silicon, cooled by fast pull in oxygen, and cooled or annealed in nitrogen or argon. The correlation is independent of doping level. In samples with different oxide thickness, neither Pb nor Dit varied significantly over the range 100–2000 A, but Pb was smaller at 50 A. In general, ESR is judged to offer prom...

[1] A. Goetzberger,et al. Interface states on semiconductor/insulator surfaces , 1976 .

[2] Bruce E. Deal,et al. Dependence of Interface State Density on Silicon Thermal Oxidation Process Variables , 1979 .

[3] Bruce E. Deal,et al. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers , 1979 .

[4] Yoshio Nishi,et al. Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I , 1971 .

[5] B. E. Deal. Standardized terminology for oxide charges associated with thermally oxidized silicon , 1980, IEEE Transactions on Electron Devices.

[6] C. R. Helms,et al. High resolution Auger sputter profiling study of the effect of phosphorus pileup on the Si–SiO2 interface morphology , 1978 .

[7] David H. McCann,et al. Fabrication of P‐Channel Silicon Gate LSI Devices with Si3 N 4 / SiO2 Gate Dielectric , 1976 .

[8] M. Chung,et al. Properties of Clean Silicon Surfaces by Paramagnetic Resonance , 1966 .

[9] S. I. Raider,et al. Nitrogen reaction at a silicon–silicon dioxide interface , 1975 .

[10] J. A. Appels,et al. Formation of Silicon Nitride at a Si ‐ SiO2 Interface during Local Oxidation of Silicon and during Heat‐Treatment of Oxidized Silicon in NH 3 Gas , 1976 .

[11] E. J. Friebele,et al. Observation and analysis of the primary 29Si hyperfine structure of the E′ center in non-crystalline SiO2 , 1974 .