论文信息 - Monolithically Peltier‐cooled vertical‐cavity surface‐emitting lasers

Monolithically Peltier‐cooled vertical‐cavity surface‐emitting lasers

We report the first tunable monolithically integrated thermoelectric controlled GaAs/AlGaAs vertical‐cavity surface‐emitting laser diode. The thermoelectric element is the n+‐GaAs substrate based on the Peltier effect. A variation of active region temperature of ±7.5 °C has been achieved using ±100 mA of thermoelectric cooler current. The observed wavelength tuning associated with this temperature shift is ±6 A. The device is useful for applications that require a high degree of frequency stability or small frequency tuning. Some examples of potential applications are in high data rate lightwave transmission, self‐electro‐optic device switches, and spectroscopy.

[1] W. Joyce,et al. Thermal resistance of heterostructure lasers , 1975 .

[2] Henry Kressel,et al. Semiconductor Lasers and Heterojunction LEDs , 1977 .

[3] R. Hunsperger,et al. Effects of contact resistance and dopant concentration in metal—Semiconductor thermoelectric coolers , 1980, IEEE Transactions on Electron Devices.

[4] E. E. Bert Basch. Optical-fiber transmission , 1987 .

[5] Naresh Chand,et al. Phase‐coupled two‐dimensional AlxGa1−xAs‐GaAs vertical‐cavity surface‐emitting laser array , 1990 .

[6] R. F. Kopf,et al. Low-threshold vertical cavity surface-emitting lasers with metallic reflectors , 1990 .

[7] Niloy K. Dutta,et al. Monolithically integrated thermoelectric controlled laser diode , 1985 .

[8] C. Burrus,et al. The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulation , 1985 .

[9] S. Hava,et al. Monolithically Peltier-cooled laser diodes , 1984, Journal of Lightwave Technology.