Millimeter-wave RF-MEMS SPDT switch networks in a SiGe BiCMOS process technology

This paper presents mm-wave capacitive RF-MEMS based Single-Pole-Double-Throw (SPDT) switches fabricated in a SiGe BiCMOS process technology. Three different SiGe RF-MEMS based SPDTs (targeting the 40-80 GHz range) present 3-4 dB of in-band losses and up to 20-25 dB of isolation, respectively. The measured in-band attenuation of the characterized SiGe MEMS SPDTs corresponds to a loss of 2-3 dB when close to 1 dB of combined losses within the RF pads has been removed. The experimental s-parameter data was obtained from RF-tests of more than 300 characterized SPDT switch networks indicating a high fabrication yield and process repeatability of the fabricated SiGe MEMS circuits. The validated SiGe MEMS switch circuits can enable single-chip reconfigurable ICs for wireless communication and sensing applications up to 100 GHz.

[1]  S. Lavanga,et al.  New fabrication process to manufacture RF-MEMS and HEMT on GaN/Si substrate , 2009, 2009 European Microwave Integrated Circuits Conference (EuMIC).

[2]  M. Kaynak,et al.  Packaged BiCMOS embedded RF-MEMS switches with integrated inductive loads , 2012, 2012 IEEE/MTT-S International Microwave Symposium Digest.

[3]  M. Kaynak,et al.  Robustness and reliability of BiCMOS embedded RF-MEMS switch , 2011, 2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

[4]  J.F. DeNatale,et al.  Monolithic GaAs PHEMT MMICs integrated with RF MEMS switches , 2004, IEEE Compound Semiconductor Integrated Circuit Symposium, 2004..

[5]  Tauno Vaha-Heikkila,et al.  CMOS Compatible Switched MEMS Capacitors Up to 220 GHz Applications , 2006, 2006 European Microwave Conference.

[6]  Hanyi Ding,et al.  Wideband on-chip RF MEMS switches in a BiCMOS technology for 60 GHz applications , 2008, 2008 International Conference on Microwave and Millimeter Wave Technology.