Insight into the output characteristics of III-V tunneling field effect transistors

The mechanism of the drain current saturation in the output characteristics of III-V tunneling field effect transistor (TFET) is explained in detail using numerical simulations as well as physics-based analytical models. We clearly identify the impact of the source doping on delayed output saturation, and non-linear turn on behavior observed in the output characteristics of TFET. Our model uses Wentzen-Krammel-Brillouin approximation and considers the exponentially decaying potential profile in the channel. The choice of source doping in III-V p-channel TFET requires tradeoff between maintaining steep switching and delayed saturation voltage which is of importance for complementary TFET logic.

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