Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors
暂无分享,去创建一个
A. Tarakji | G. Simin | A. Koudymov | M.A. Khan | J. Yang | M. Shur | G. Simin | R. Gaska | V. Adivarahan | J. Yang | A. Koudymov | A. Tarakji | M.A. Khan | H. Fatima | M. Gaevski | H. Fatima | R. Gaska | M.S. Shur | V. Adivarahan | M. Gaevski | W.H. Sun | S. Saygi | S. Saygı | W. Sun
[1] A. Lunev,et al. AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor , 2000, IEEE Electron Device Letters.
[2] Michael S. Shur,et al. Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications , 2003 .
[3] M. Shur,et al. DC and microwave performance of a GaN/AlGaN MOSHFET under high temperature stress , 2002 .
[4] M. Shur,et al. Maximum current in nitride-based heterostructure field-effect transistors , 2002 .
[5] Michael S. Shur,et al. AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates , 2000 .
[6] Michael S. Shur,et al. Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors , 2001 .