An overview of gallium nitride growth chemistry and its effect on reactor design: Application to a planetary radial-flow CVD system

Abstract In this paper, gallium nitride (GaN) growth chemistry is characterized by two competing reaction pathways. An overview of GaN gas-phase and surface-phase chemistry is used to generate a comprehensive model for epitaxial GaN growth from the commonly used precursors, trimethylgallium ((CH 3 ) 3 Ga) and ammonia (NH 3 ). The role of reactor geometry in controlling the selectivity among the competing reaction pathways is explored in the context of a planetary radial-flow CVD system. Finally, application of a geometrically based uniformity criterion is presented for film uniformity optimization.

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