论文信息 - Molecular beam epitaxial growth of single‐crystal Al films on GaAs (110)

Molecular beam epitaxial growth of single‐crystal Al films on GaAs (110)

Molecular beam epitaxy methods have been used to grow good quality single‐crystal films of fcc Al on (110) GaAs. These films were characterized by Auger, high energy electron diffraction, and glancing incidence x‐ray diffraction using a Read camera. Successful growth was found to be dependent upon increased flux rates and lowered substrate temperatures in order to overcome the high surface mobility of Al on GaAs.

G. A. Prinz | M. Goldenberg | J. M. Ferrari | M. Goldenberg | G. Prinz

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