Optical pump-probe scanning tunneling microscopy for probing ultrafast dynamics on the nanoscale

The development of a method for exploring the ultrafast transient dynamics in small organized structures with high spatial resolution is expected to be a basis for further advances in current science and technology. Recently, we have developed a new microscopy technique by combining scanning tunneling microscopy (STM) with ultrashort-pulse laser technology, which enables the visualization of ultrafast carrier dynamics even on the single-atomic level. A nonequilibrium carrier distribution is generated using ultrashort laser pulses and its relaxation processes are probed by STM using the optical pump-probe method realized in STM by the pulse-picking technique. In this paper, the fundamentals of the new microscopy technique are overviewed.

[1]  H. Shigekawa,et al.  Analysis of Time-Resolved Tunnel Current Signal in Sub-Picosecond Range Observed by Shaken-Pulse-Pair-Excited Scanning Tunneling Miscroscopy , 2005 .

[2]  Yan Pennec,et al.  Ultrafast spectroscopy with a scanning tunneling microscope , 2011 .

[3]  M. Semtsiv,et al.  Influence of tip-induced band bending on tunnelling spectra of semiconductor surfaces , 2007 .

[4]  J. Shah Ultrafast spectroscopy of semiconductors and semiconductor nanostructures , 1996 .

[5]  Shiwei Wu,et al.  Two-photon-induced hot-electron transfer to a single molecule in a scanning tunneling microscope , 2010 .

[6]  Chen,et al.  Electrostatic sample-tip interactions in the scanning tunneling microscope. , 1993, Physical review letters.

[7]  Yoshitaka Okada,et al.  Microscopic basis for the mechanism of carrier dynamics in an operating p-n junction examined by using light-modulated scanning tunneling spectroscopy. , 2007, Physical review letters.

[8]  K. Ando,et al.  Studies on an (NH4)2Sx-Treated GaAs Surface Using AES, LEELS and RHEED , 1989 .

[9]  David G. Cahill,et al.  Ultrafast time resolution in scanned probe microscopies , 1990 .

[10]  D. Awschalom,et al.  Semiconductor spintronics and quantum computation , 2002 .

[11]  Peide D. Ye,et al.  Effects of (NH4)2S passivation on the off-state performance of 3-dimensional InGaAs metal-oxide-semiconductor field-effect transistors , 2011 .

[12]  H. Shigekawa,et al.  Nanoscale dynamics probed by laser-combined scanning tunneling microscopy , 2008 .

[13]  M. Yamashita,et al.  Observation and electric current control of a local spin in a single-molecule magnet , 2011, Nature communications.

[14]  H. Shigekawa,et al.  Surface structure of selenium‐treated GaAs (001) studied by field ion scanning tunneling microscopy , 1991 .

[15]  R. Morita,et al.  Mono-Cycle Photonics and Optical Scanning Tunneling Microscopy , 2005 .

[16]  R. Oshima,et al.  Nanoscale probing of transient carrier dynamics modulated in a GaAs-PIN junction by laser-combined scanning tunneling microscopy. , 2012, Nanoscale.

[17]  M. R. Freeman,et al.  Picosecond Resolution in Scanning Tunneling Microscopy , 1993, Science.

[18]  Osamu Takeuchi,et al.  Real-space imaging of transient carrier dynamics by nanoscale pump–probe microscopy , 2010 .

[19]  A. Yazdani,et al.  Mapping the wave function of transition metal acceptor states in the GaAs surface , 2009, 0907.4703.

[20]  K. C. Schwab,et al.  Radio-frequency scanning tunnelling microscopy , 2007, Nature.

[21]  S. Tsukamoto,et al.  Observation of sulfur‐terminated GaAs(001)‐(2×6) reconstruction by scanning tunneling microscopy , 1994 .

[22]  Q. Xue,et al.  The Coexistence of Superconductivity and Topological Order in the Bi2Se3 Thin Films , 2011, Science.

[23]  Stefan Grafström,et al.  Photoassisted scanning tunneling microscopy , 2002 .

[24]  H. Shigekawa,et al.  Laser-combined scanning tunnelling microscopy for probing ultrafast transient dynamics , 2010, Journal of physics. Condensed matter : an Institute of Physics journal.

[25]  Daniel Rugar,et al.  High‐speed scanning tunneling microscopy: Principles and applications , 1994 .

[26]  M. Oshima,et al.  Synchrotron radiation photoemission analysis for (NH4)2Sx‐treated GaAs , 1991 .

[27]  P. Leiderer,et al.  Tunneling spectroscopy on semiconductors with a low surface state density , 1997 .

[28]  H. Shigekawa,et al.  Single-Atomic-Level Probe of Transient Carrier Dynamics by Laser-Combined Scanning Tunneling Microscopy , 2013 .

[29]  Gerard Mourou,et al.  Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures , 1991 .

[30]  Jens Wiebe,et al.  Detecting excitation and magnetization of individual dopants in a semiconductor , 2010, Nature.

[31]  D. Eigler,et al.  Measurement of Fast Electron Spin Relaxation Times with Atomic Resolution , 2010, Science.

[32]  H. Shigekawa,et al.  Direct Probing of Transient Photocurrent Dynamics in p-WSe2 by Time-Resolved Scanning Tunneling Microscopy , 2012 .

[33]  M. Flatté,et al.  Atom-by-atom substitution of Mn in GaAs and visualization of their hole-mediated interactions , 2006, Nature.

[34]  Y. Okada,et al.  Probing subpicosecond dynamics using pulsed laser combined scanning tunneling microscopy , 2004 .

[35]  Shimon Weiss,et al.  Ultrafast scanning probe microscopy , 1993 .

[36]  M. Morgenstern,et al.  Versatile scanning tunneling microscopy with 120 ps time resolution , 2013, 1302.6522.

[37]  C. Delerue,et al.  Probing the Carrier Capture Rate of a Single Quantum Level , 2008, Science.

[38]  H. Shigekawa,et al.  Light-modulated scanning tunneling spectroscopy for nanoscale imaging of surface photovoltage , 2004 .

[39]  H. Shigekawa,et al.  Laser-Combined Scanning Tunneling Microscopy on the Carrier Dynamics in Low-Temperature-Grown GaAs/AlGaAs/GaAs , 2011 .