Characterization of the Resonant Third-Order Nonlinear Susceptibility of Si-Doped GaN–AlN Quantum Wells and Quantum Dots at 1.5 $\mu$m
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M. Gonzalez-Herraez | E. Monroy | M. Tchernycheva | J. Solis | F. Julien | J. Solís | M. González-Herráez | E. Monroy | M. Tchernycheva | F. Naranjo | S. Valdueza-Felip | L. Nevou | F. Guillot | S. Valdueza-Felip | L. Nevou | F.H. Julien | F. Guillot | H. Fernández | F.B. Naranjo | H. Fernandez
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