Characterization of the Resonant Third-Order Nonlinear Susceptibility of Si-Doped GaN–AlN Quantum Wells and Quantum Dots at 1.5 $\mu$m

We report on the third-order optical nonlinearity of the <i>e</i> <sub>1</sub> -<i>e</i> <sub>2</sub> intersubband transition in GaN-AlN quantum wells and the <i>s</i>-<i>p</i> <i>z</i> intraband transition in GaN-AlN quantum dots, both of them in the spectral region around 1.5 mum. The results in terms of third-order susceptibility, together with the ultrafast nature of the nonlinear response, render these GaN-AlN nanostructures particularly suitable for optical switching and wavelength conversion applications.

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